Skip to main content
Research article - Peer-reviewed, 2022

Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides

Samii, Rouzbeh; Buttera, Sydney C.; Kessler, Vadim; O'Brien, Nathan J.


Indium and gallium nitride are important semi-conductor materials with desirable properties for high-frequency and power electronics. We have previously demonstrated high-quality ALD grown InN and GaN using the hexacoordinated 1,3-diisopropyltriazenide In(III) and Ga(III) precursors. Herein we report the structural and thermal properties their analogues employing combinations of isopropyl, sec-butyl and tert-butyltriazenide alkyl groups on the exocyclic nitrogen of the triazenide ligand. The new triazenide compounds were all found to be volatile (80-120 degrees C, 0.5 mbar) and showed very good thermal stability (200 and 300 degrees C). These new triazenide analogues provide a set of precursors whose thermal properties are determined and can be accordingly tailored by strategic choice of exocyclic nitrogen alkyl substituents.


Gallium; Indium; Precursors; Triazenides; Volatile

Published in

European Journal of Inorganic Chemistry
2022, volume: 2022, number: 24, article number: e202200161

Authors' information

Samii, Rouzbeh
Linkoping University
Buttera, Sydney C.
Carleton University
Swedish University of Agricultural Sciences, Department of Molecular Sciences
O'Brien, Nathan J.
Linkoping University

UKÄ Subject classification

Materials Chemistry

Publication Identifiers


URI (permanent link to this page)